DocumentCode

1024705

Title

Effect of Ga diffusion through SIO2on Si MOS transistors

Author

Fang, F.F. ; Yu, H.N.

Volume

12

Issue

9

fYear

1965

fDate

9/1/1965 12:00:00 AM

Firstpage

507

Lastpage

508

Keywords

Electrodes; Electromagnetic heating; FETs; Frequency; Gaussian processes; Indium; Laboratories; Microwave devices; Resonance; Telephony;

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/T-ED.1965.15580

Filename

1474044