Title :
Effect of Ga diffusion through SIO2on Si MOS transistors
Author :
Fang, F.F. ; Yu, H.N.
fDate :
9/1/1965 12:00:00 AM
Keywords :
Electrodes; Electromagnetic heating; FETs; Frequency; Gaussian processes; Indium; Laboratories; Microwave devices; Resonance; Telephony;
Journal_Title :
Electron Devices, IEEE Transactions on
DOI :
10.1109/T-ED.1965.15580
