• DocumentCode
    1024752
  • Title

    New fabrication technique for integrated-optical taper with controllable profile by selective liquid-phase epitaxy of GaAs

  • Author

    Sang Bae Kim ; Kee Young Kwon ; Young Se Kwon

  • Author_Institution
    Korea Advanced Institute of Science & Technology, Department of Electrical Engineering, Seoul, Korea
  • Volume
    22
  • Issue
    15
  • fYear
    1986
  • Firstpage
    806
  • Lastpage
    808
  • Abstract
    A new fabrication technique for integrated-optical tapers with controllable profiles on a GaAs substrate by selective liquid-phase epitaxy is proposed based on two-dimensional numerical results, and preliminary experimental results are given. This technique takes advantage of the dependence of the epitaxial layer thickness on the window width.
  • Keywords
    III-V semiconductors; gallium arsenide; integrated optics; liquid phase epitaxial growth; controllable profile; epitaxial layer thickness; experimental results; fabrication technique; integrated optics; integrated-optical taper; selective LPE; selective liquid-phase epitaxy; semiconductors; two-dimensional numerical results; window width;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19860553
  • Filename
    4256757
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1024752