Title :
New fabrication technique for integrated-optical taper with controllable profile by selective liquid-phase epitaxy of GaAs
Author :
Sang Bae Kim ; Kee Young Kwon ; Young Se Kwon
Author_Institution :
Korea Advanced Institute of Science & Technology, Department of Electrical Engineering, Seoul, Korea
Abstract :
A new fabrication technique for integrated-optical tapers with controllable profiles on a GaAs substrate by selective liquid-phase epitaxy is proposed based on two-dimensional numerical results, and preliminary experimental results are given. This technique takes advantage of the dependence of the epitaxial layer thickness on the window width.
Keywords :
III-V semiconductors; gallium arsenide; integrated optics; liquid phase epitaxial growth; controllable profile; epitaxial layer thickness; experimental results; fabrication technique; integrated optics; integrated-optical taper; selective LPE; selective liquid-phase epitaxy; semiconductors; two-dimensional numerical results; window width;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19860553
