Title :
Ferroelectric field effect device
Author :
Heilmeier, G.H. ; Heyman, P.M.
fDate :
9/1/1965 12:00:00 AM
Keywords :
Admittance measurement; Capacitance measurement; Conducting materials; Crystalline materials; Dielectric losses; Ferroelectric materials; Frequency; Laboratories; Thin film devices; Voltage;
Journal_Title :
Electron Devices, IEEE Transactions on
DOI :
10.1109/T-ED.1965.15587
