DocumentCode
1024778
Title
Measurement of fast surface state parameters by the A-C MOS conductance method
Author
Nicollian, E.H. ; Goetzberger, A.
Volume
12
Issue
9
fYear
1965
fDate
9/1/1965 12:00:00 AM
Firstpage
508
Lastpage
508
Keywords
Admittance measurement; Capacitance measurement; Dielectric losses; Dielectric measurements; Frequency measurement; Laboratories; Pollution measurement; Silicon; Surface impedance; Telephony;
fLanguage
English
Journal_Title
Electron Devices, IEEE Transactions on
Publisher
ieee
ISSN
0018-9383
Type
jour
DOI
10.1109/T-ED.1965.15588
Filename
1474052
Link To Document