Title :
Influence of nonequilibrium carriers on the surface breakdown of N + P diodes and MOS-structures
fDate :
9/1/1965 12:00:00 AM
Keywords :
Conductivity; Electric breakdown; Gallium arsenide; Gold; Heterojunctions; Laboratories; Lighting; Semiconductor diodes; Semiconductor films; Silicon;
Journal_Title :
Electron Devices, IEEE Transactions on
DOI :
10.1109/T-ED.1965.15595
