Title :
Electrical and electro-optical properties of GaAs-InSb "Schottky-barrier" heterojunctions
Author :
Hinkley, E.D. ; Rediker, R.H.
fDate :
9/1/1965 12:00:00 AM
Keywords :
Current-voltage characteristics; Doping; Forward contracts; Gallium arsenide; Heterojunctions; Schottky diodes; Semiconductor process modeling; Temperature; Tunneling; Voltage;
Journal_Title :
Electron Devices, IEEE Transactions on
DOI :
10.1109/T-ED.1965.15599
