DocumentCode
1024882
Title
Electrical and electro-optical properties of GaAs-InSb "Schottky-barrier" heterojunctions
Author
Hinkley, E.D. ; Rediker, R.H.
Volume
12
Issue
9
fYear
1965
fDate
9/1/1965 12:00:00 AM
Firstpage
511
Lastpage
511
Keywords
Current-voltage characteristics; Doping; Forward contracts; Gallium arsenide; Heterojunctions; Schottky diodes; Semiconductor process modeling; Temperature; Tunneling; Voltage;
fLanguage
English
Journal_Title
Electron Devices, IEEE Transactions on
Publisher
ieee
ISSN
0018-9383
Type
jour
DOI
10.1109/T-ED.1965.15599
Filename
1474063
Link To Document