Title :
Electrical characteristics of Ge-GaAs and Ge-Si p-n heterojunctions
Author :
Donnelly, J.P. ; Feucht, D.L.
fDate :
9/1/1965 12:00:00 AM
Keywords :
Current-voltage characteristics; Diodes; Doping; Electric variables; Forward contracts; Gallium arsenide; Heterojunctions; Semiconductor process modeling; Tunneling; Voltage;
Journal_Title :
Electron Devices, IEEE Transactions on
DOI :
10.1109/T-ED.1965.15600
