• DocumentCode
    1024948
  • Title

    Automatic positioning of device electrodes using the scanning electron microscope

  • Author

    Wells, O.C. ; Everhart, T.E. ; Matta, R.K.

  • Author_Institution
    IBM Watson Research Labs., Yorktown Heights, N. Y.
  • Volume
    12
  • Issue
    10
  • fYear
    1965
  • fDate
    10/1/1965 12:00:00 AM
  • Firstpage
    556
  • Lastpage
    563
  • Abstract
    In current technology, the edge definition that can be achieved by the photoresist process is approximately ten times sharper than the registration accuracy that can be maintained over a workpiece of any reasonable size. A description is presented of an attempt to improve registration through feedback from the workpiece itself; the servo signal is generated by the photoresist-exposing radiation, a submicron-diameter electron beam. Using this technique, the gate electrode of a field-effect transistor (FET) has been automatically positioned relative to the channel.
  • Keywords
    Electrodes; Electron beams; Electron emission; Etching; FETs; Fabrication; Indexing; Resists; Scanning electron microscopy; Strips;
  • fLanguage
    English
  • Journal_Title
    Electron Devices, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9383
  • Type

    jour

  • DOI
    10.1109/T-ED.1965.15607
  • Filename
    1474071