DocumentCode
1024948
Title
Automatic positioning of device electrodes using the scanning electron microscope
Author
Wells, O.C. ; Everhart, T.E. ; Matta, R.K.
Author_Institution
IBM Watson Research Labs., Yorktown Heights, N. Y.
Volume
12
Issue
10
fYear
1965
fDate
10/1/1965 12:00:00 AM
Firstpage
556
Lastpage
563
Abstract
In current technology, the edge definition that can be achieved by the photoresist process is approximately ten times sharper than the registration accuracy that can be maintained over a workpiece of any reasonable size. A description is presented of an attempt to improve registration through feedback from the workpiece itself; the servo signal is generated by the photoresist-exposing radiation, a submicron-diameter electron beam. Using this technique, the gate electrode of a field-effect transistor (FET) has been automatically positioned relative to the channel.
Keywords
Electrodes; Electron beams; Electron emission; Etching; FETs; Fabrication; Indexing; Resists; Scanning electron microscopy; Strips;
fLanguage
English
Journal_Title
Electron Devices, IEEE Transactions on
Publisher
ieee
ISSN
0018-9383
Type
jour
DOI
10.1109/T-ED.1965.15607
Filename
1474071
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