Title : 
Automatic positioning of device electrodes using the scanning electron microscope
         
        
            Author : 
Wells, O.C. ; Everhart, T.E. ; Matta, R.K.
         
        
            Author_Institution : 
IBM Watson Research Labs., Yorktown Heights, N. Y.
         
        
        
        
        
            fDate : 
10/1/1965 12:00:00 AM
         
        
        
        
            Abstract : 
In current technology, the edge definition that can be achieved by the photoresist process is approximately ten times sharper than the registration accuracy that can be maintained over a workpiece of any reasonable size. A description is presented of an attempt to improve registration through feedback from the workpiece itself; the servo signal is generated by the photoresist-exposing radiation, a submicron-diameter electron beam. Using this technique, the gate electrode of a field-effect transistor (FET) has been automatically positioned relative to the channel.
         
        
            Keywords : 
Electrodes; Electron beams; Electron emission; Etching; FETs; Fabrication; Indexing; Resists; Scanning electron microscopy; Strips;
         
        
        
            Journal_Title : 
Electron Devices, IEEE Transactions on
         
        
        
        
        
            DOI : 
10.1109/T-ED.1965.15607