Author :
Lupu, A. ; Julien, F.H. ; Golka, S. ; Pozzovivo, G. ; Strasser, G. ; Baumann, E. ; Giorgetta, F. ; Hofstetter, D. ; Nicolay, S. ; Mosca, M. ; Feltin, E. ; Carlin, J.-F. ; Grandjean, N.
Abstract :
We report on the demonstration of low-loss, single-mode GaN-InAlN ridge waveguides (WGs) at fiber-optics telecommunication wavelengths. The structure grown by metal-organic vapor phase epitaxy contains AlInN cladding layers lattice-matched to GaN. For slab-like WGs propagation losses are below 3 dB/mm and independent of light polarization. For 2.6-mum-wide WGs the propagation losses in the 1.5- to 1.58-mum spectral region are as low as 1.8 and 4.9 dB/mm for transverse-electric- and transverse-magnetic-polarization, respectively. The losses are attributed to the sidewall roughness and can be further reduced by the optimization of the etching process.
Keywords :
MOCVD; aluminium compounds; etching; gallium compounds; indium compounds; light polarisation; light propagation; optical fabrication; optical waveguides; ridge waveguides; vapour phase epitaxial growth; AlInN; AlInN cladding layers; GaN-InAlN; GaN-InAlN ridge waveguides; etching process; fiber-optics telecommunication wavelengths; lattice matching; light polarization; metal-organic vapor phase epitaxy; propagation losses; transverse-electric-polarization; transverse-magnetic-polarization; wavelength 1.5 mum to 1.58 mum; Epitaxial growth; Gallium nitride; High speed optical techniques; Optical buffering; Optical devices; Optical materials; Optical refraction; Optical saturation; Optical waveguides; Propagation losses; GaN; intersubband (ISB) devices; optical communication; optical waveguide (WG);
