DocumentCode
1025043
Title
Changes in properties of GaN blue light-emitting diodes over time
Author
Yanagisawa, Takufumi
Author_Institution
Electrotechnical Laboratory, Tsukuba, Japan
Volume
22
Issue
16
fYear
1986
Firstpage
846
Lastpage
847
Abstract
Electrical conduction tests of metal-insulator-semiconductor(MIS)-structure GaN blue light-emitting diodes have been performed. Samples in which the emission intensity improved over time and samples in which the emission intensity degraded with time were observed. The pattern of change in both types was studied by measuring the device properties. Degradation of emission intensity was seen to be caused by changes in the emission and electron injection mechanism. Reference was made to the action of Zn in the I-S region.
Keywords
III-V semiconductors; gallium compounds; light emitting diodes; metal-insulator-semiconductor devices; semiconductor device testing; GaN blue light-emitting diodes; III-V semiconductor; MIS structure; Zn; electrical conduction tests; electron injection mechanism; emission intensity; time degradation;
fLanguage
English
Journal_Title
Electronics Letters
Publisher
iet
ISSN
0013-5194
Type
jour
DOI
10.1049/el:19860580
Filename
4256785
Link To Document