DocumentCode
1025128
Title
High-efficiency power 2DEGFETS based on a surface undoped layer n-AlGaAs/GaAs selectively doped structure for Ka-band
Author
Hida, Hirotaka ; Akiba, Y. ; Suzuki, Yuya ; Toyoshima, Hisashi ; Ohata, Katsuki
Author_Institution
NEC Corporation, Microelectronics Research Laboratories, Kawasaki, Japan
Volume
22
Issue
16
fYear
1986
Firstpage
862
Lastpage
864
Abstract
We have evaluated the power performance of surface undoped structure n-AlGaAs/GaAs 2DEGFETs at Ka-band. This unique configuration 2DEGFET with a 0.5 ¿m gate length showed a 143 W/mm output power at 28.5 GHz. Furthermore, 7 dB linear gain and 21% power-added efficiency were attained, which are the best data in the Ka-band frequency range reported to date.
Keywords
III-V semiconductors; aluminium compounds; field effect transistors; gallium arsenide; power transistors; solid-state microwave devices; 2DEGFETs; Ka-band; gate length; linear gain; output power; power performance; power-added efficiency; surface undoped structure;
fLanguage
English
Journal_Title
Electronics Letters
Publisher
iet
ISSN
0013-5194
Type
jour
DOI
10.1049/el:19860590
Filename
4256795
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