Title :
Far-infra-red emission from two-dimensional plasmon in AlGaAs/GaAs heterostructure
Author :
Okisu, N. ; Kobayashi, Takehiko
Author_Institution :
Osaka University, Faculty of Engineering Science, Toyonaka, Japan
Abstract :
The far-infra-red (FIR) emission from the grating-coupled two-dimensional (2-D) plasmon in an AlGaAs/GaAs heterointerface was investigated and a quite high emission power of 30 ¿W/cm2 (460 ¿m wavelength) was obtained under an applied electric field of 760 V/cm. This output power is three orders of magnitude higher than that reported previously. Our calculations suggest that an applied field of 2¿3 kV/cm is sufficient to offer FIR (100¿200 ¿m) emission in excess of milliwatts/centimetre2.
Keywords :
III-V semiconductors; aluminium compounds; gallium arsenide; high field effects; infrared spectra of inorganic solids; plasmons; semiconductor junctions; FIR; applied electric field; emission power; far-infrared emission; output power; two-dimensional plasmon;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19860599
