• DocumentCode
    1025229
  • Title

    Far-infra-red emission from two-dimensional plasmon in AlGaAs/GaAs heterostructure

  • Author

    Okisu, N. ; Kobayashi, Takehiko

  • Author_Institution
    Osaka University, Faculty of Engineering Science, Toyonaka, Japan
  • Volume
    22
  • Issue
    16
  • fYear
    1986
  • Firstpage
    877
  • Lastpage
    878
  • Abstract
    The far-infra-red (FIR) emission from the grating-coupled two-dimensional (2-D) plasmon in an AlGaAs/GaAs heterointerface was investigated and a quite high emission power of 30 ¿W/cm2 (460 ¿m wavelength) was obtained under an applied electric field of 760 V/cm. This output power is three orders of magnitude higher than that reported previously. Our calculations suggest that an applied field of 2¿3 kV/cm is sufficient to offer FIR (100¿200 ¿m) emission in excess of milliwatts/centimetre2.
  • Keywords
    III-V semiconductors; aluminium compounds; gallium arsenide; high field effects; infrared spectra of inorganic solids; plasmons; semiconductor junctions; FIR; applied electric field; emission power; far-infrared emission; output power; two-dimensional plasmon;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19860599
  • Filename
    4256804
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1025229