• DocumentCode
    1025236
  • Title

    Performance of 1-mm2 Silicon Photomultiplier

  • Author

    Stewart, A.G. ; Saveliev, V. ; Bellis, S.J. ; Herbert, D.J. ; Hughes, P.J. ; Jackson, J.C.

  • Author_Institution
    Blackrock, Cork
  • Volume
    44
  • Issue
    2
  • fYear
    2008
  • Firstpage
    157
  • Lastpage
    164
  • Abstract
    A silicon photomultiplier (SPM) is a large area detector consisting of a parallel array of photon counting microcells. Each microcell consists of a Geiger Mode photodiode with an integrated quenching element. Each microcell is then connected to a common output. The microcells have a uniform gain of up to 10 and provide an identical charge output signal for each photon detected. Under illumination the summed output of the detector is proportional to the number of Geiger pulses and hence proportional to the incident photon flux. This combination gives extremely high performance comparable to that of a conventional photomultiplier tube (PMT). We report on the characterization of two different 1 mm2 SPM detector designs with 620 and 920 microcells at room temperature (20 deg) and down to . We assess detection efficiency, breakdown voltage, gain, dark rate, crosstalk, timing jitter and dynamic range. The SPM detector operates over the visible region of the spectrum, characterized here from 400 to 800 nm. The peak photon detection efficiency of 15% occurs at 500 nm with a cooled () dark rate of 600 at a bias voltage of 31 V. In a test for positron emission tomography (PET), an energy resolution of 25% was recorded for the detection of 511 keV gamma radiation using 1 mm1 mm15 mm LYSO scintillator crystal. The SPM has many applications such as medical imaging, microscopy, high-energy physics, and homeland security.
  • Keywords
    Geiger counters; elemental semiconductors; integrated optoelectronics; optical crosstalk; photodetectors; photodiodes; photomultipliers; photon counting; silicon; timing jitter; Geiger mode photodiode; Geiger pulses; Si; breakdown voltage; crosstalk; dark rate; energy resolution; incident photon flux; integrated quenching element; photomultiplier tube; photon counting microcells; photon detection efficiency; photon detector; positron emission tomography; silicon photomultiplier; temperature 20 degC; temperature 293 K to 298 K; timing jitter; Gamma ray detection; Gamma ray detectors; Microcell networks; Photodiodes; Photomultipliers; Positron emission tomography; Radiation detectors; Scanning probe microscopy; Sensor arrays; Silicon; Geiger mode photodiodes; photomultiplier tube (PMT); positron emission tomography (PET); scintillation detectors; silicon;
  • fLanguage
    English
  • Journal_Title
    Quantum Electronics, IEEE Journal of
  • Publisher
    ieee
  • ISSN
    0018-9197
  • Type

    jour

  • DOI
    10.1109/JQE.2007.910940
  • Filename
    4418450