Title :
The properties of ZrN films and ZrN-based tunnel junctions
Author :
Pan, V.M. ; Komashko, V.A. ; Rudenko, E.M. ; Boguslavsky, Yu M. ; Zelenkevic, R.L.
Author_Institution :
Institute of Metal Physics, Kiev, USSR
fDate :
3/1/1987 12:00:00 AM
Abstract :
The results of investigation of the structure and physical properties of zirconium nitride films and tunnel junctions made of them are presented. Formation conditions of ZrN heteroepitaxial layers on sapphire substrates have been studied. Superconducting properties and resistivity of 23 to 240nm thickness films obtained on different substrates over deposition temperature range 450 to 1000°C have been investigated. The energy gap in ZrN films has been determined from I-V characteristics of ZrN-I-Pb junctions taking into account the proximity effect.
Keywords :
Superconducting films; Tunnel devices/effects; Zirconium materials/devices; Atomic layer deposition; Cathodes; Crystallization; Physics; Sputtering; Substrates; Tellurium; Temperature dependence; Temperature distribution; Thermal stability;
Journal_Title :
Magnetics, IEEE Transactions on
DOI :
10.1109/TMAG.1987.1065110
