Title :
Half-micrometre-base lateral bipolar transistors made in thin silicon-on-insulator films
Author_Institution :
Hewlett-Packard Laboratories, Palo Alto, USA
Abstract :
NPN and PNP lateral bipolar transistors having a base length shorter than 0.5 ¿m have been made in thin (100 nm) silicon-on-insulator films. Current gains of 75 and 40 have been obtained in NPN and PNP devices, respectively. Measurements indicate a base generation lifetime of 1 ¿s, and leakage currents of a fraction of a picoampere have been measured. The device fabrication is compatible with an SOI CMOS fabrication process.
Keywords :
bipolar transistors; carrier lifetime; semiconductor technology; N P N; P N P; SOI technology; base generation lifetime; base length; device fabrication; lateral bipolar transistors; leakage currents;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19860604
