Title :
Locking bandwidth and relaxation oscillations of an injection-locked semiconductor laser
Author :
Petitbon, I. ; Gallion, P. ; Debarge, G. ; Chabran, C.
Author_Institution :
Ecole Nationale Supérieure des Télécommunications, Groupe Optólectronique et Microondes, Département Télécommunications, Paris, France
Abstract :
Detailed observations of an injection-locked semiconductor laser have allowed a verification of theoretical predictions for the locking bandwidth. In parallel, the fine structure of the intensity spectrum has been investigated and has revealed a strong modification of relaxation oscillation damping when locking is achieved.
Keywords :
III-V semiconductors; aluminium compounds; gallium arsenide; laser modes; semiconductor junction lasers; III-V semiconductors; injection-locked semiconductor laser; intensity spectrum; locking bandwidth; oscillation damping; relaxation oscillations;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19860606
