• DocumentCode
    1025292
  • Title

    Locking bandwidth and relaxation oscillations of an injection-locked semiconductor laser

  • Author

    Petitbon, I. ; Gallion, P. ; Debarge, G. ; Chabran, C.

  • Author_Institution
    Ecole Nationale Supérieure des Télécommunications, Groupe Optólectronique et Microondes, Département Télécommunications, Paris, France
  • Volume
    22
  • Issue
    17
  • fYear
    1986
  • Firstpage
    889
  • Lastpage
    890
  • Abstract
    Detailed observations of an injection-locked semiconductor laser have allowed a verification of theoretical predictions for the locking bandwidth. In parallel, the fine structure of the intensity spectrum has been investigated and has revealed a strong modification of relaxation oscillation damping when locking is achieved.
  • Keywords
    III-V semiconductors; aluminium compounds; gallium arsenide; laser modes; semiconductor junction lasers; III-V semiconductors; injection-locked semiconductor laser; intensity spectrum; locking bandwidth; oscillation damping; relaxation oscillations;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19860606
  • Filename
    4256812
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1025292