• DocumentCode
    1025328
  • Title

    Refractory material SIS junction structures

  • Author

    Belitsky, V Yu ; Gubankov, V.N. ; Koshelets, V.P. ; Ovsyannikov, G.A. ; Serpuchenko, I.L. ; Shitov, S.V. ; Tarasov, M.A. ; Vystavkin, A.N.

  • Author_Institution
    Institute of Radio Engineering and Electronics, Moscow, USSR
  • Volume
    23
  • Issue
    2
  • fYear
    1987
  • fDate
    3/1/1987 12:00:00 AM
  • Firstpage
    684
  • Lastpage
    687
  • Abstract
    Niobium based SIS junction structures for microwave receiving devices were investigated. The possibility of the mixing efficiency improving for Nb-Al2O3-Nb junctions with a negative resistance on I-V curve near the gap voltage has been demonstrated. Comparative microwave investigation of the parallel and series DC biased arrays shows the advantage of the first one. SIS junction capacitance has been compensated with microstrip or lumped elements at the signal frequency. Such compensated structures were investigated at frequencies 38 and 76 GHz both in waveguide and quasioptic systems.
  • Keywords
    Millimeter-wave mixers; Superconductor insulator superconductor devices; Capacitance; Frequency; Josephson junctions; Knee; Microwave antenna arrays; Niobium; Superconducting device noise; Superconducting devices; Superconducting microwave devices; Temperature;
  • fLanguage
    English
  • Journal_Title
    Magnetics, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9464
  • Type

    jour

  • DOI
    10.1109/TMAG.1987.1065119
  • Filename
    1065119
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1025328