Title :
High-speed zero-bias waveguide photodetectors
Author :
Bowers, John E. ; Burrus, C.A.
Author_Institution :
AT&T Bell Laboratories, Holmdel, USA
Abstract :
We describe an InGaAsP waveguide PIN photodetector that (unlike conventional PINs) provides for light absorption perpendicular to current collection, a feature that results in high-speed, high-efficiency and relatively bias-insensitive operation. Our uncoated, packaged device has displayed impulse response of 40 ps (Tektronix S-4 sampling head) and efficiency of 25% at zero bias.
Keywords :
III-V semiconductors; gallium arsenide; indium compounds; optical waveguides; photodetectors; impulse response 40 ps; optical waveguides; p-i-n type; quantum efficiency; waveguide PIN photodetector; zero bias;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19860617
