• DocumentCode
    1025407
  • Title

    Remodeling the p-n junction

  • Author

    Damljanovic, Dragoljub D.

  • Author_Institution
    Inst. of Nucl. Sci., Beograde, Yugoslavia
  • Volume
    9
  • Issue
    6
  • fYear
    1993
  • Firstpage
    35
  • Lastpage
    37
  • Abstract
    A new expression for the p-n junction that uses experimentally derived parameters that are more easily measured than those derived from theory is presented. This approach is useful when designing circuits that use diodes and transistors as diodes, such as thermometers, logarithmic amplifiers, and voltage-reference sources.<>
  • Keywords
    p-n junctions; semiconductor device models; diodes; experimentally derived parameters; p-n junction; Charge measurement; Circuits; Current measurement; Light emitting diodes; Microstrip; P-n junctions; Q measurement; Silicon; Temperature dependence; Voltage;
  • fLanguage
    English
  • Journal_Title
    Circuits and Devices Magazine, IEEE
  • Publisher
    ieee
  • ISSN
    8755-3996
  • Type

    jour

  • DOI
    10.1109/101.261890
  • Filename
    261890
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1025407