Title :
Long-wavelength waveguide multiple-quantum-well (MQW) optical modulator with 30:1 on/off ratio
Author :
Wakita, Ken ; Kawamura, Y. ; Yoshikuni, Y. ; Asahi, H.
Author_Institution :
NTT Electrical Communications Laboratories, Atsugi, Japan
Abstract :
Large on/off ratio optical modulation of long-wavelength light propagating along the plane of InGaAs/InAlAs multiple-quantum-well (MQW) structures grown by molecular beam epitaxy (MBE) is obtained for the first time. These waveguide MQW optical modulators have a modulation on/off ratio of 30:1 (15 dB) at a driving voltage as low as 9 V, and a capacitance-limited pulse response of 280 ps (FWHM). This measurement is the first step in achieving faster and higher extinction ratio devices.
Keywords :
III-V semiconductors; electro-optical devices; gallium arsenide; indium compounds; molecular beam epitaxial growth; optical modulation; optical waveguides; semiconductor epitaxial layers; semiconductor superlattices; MBE; impulse response 280 ps; light propagation; long wavelength optical waveguide; modulation on/off ratio 30:1; molecular beam epitaxy; multiple-quantum-well; optical modulators;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19860618
