Title :
4 Gbit/s GaAs MESFET laser-driver IC
Author_Institution :
AT&T Bell Laboratories, Murray Hill, USA
Abstract :
A high-speed laser-driver IC has been fabricated using etched-gate enhancement/depletion-mode MESFET technology. It has been demonstrated that the device is capable of driving 25¿ load with 80 mA modulation current at up to 4 Gbit/s NRZ data rate.
Keywords :
III-V semiconductors; Schottky gate field effect transistors; field effect integrated circuits; gallium arsenide; integrated optoelectronics; optical modulation; semiconductor junction lasers; MESFET laser-driver IC; NRZ data rate; etched-gate enhancement/depletion-mode MESFET technology; modulation current;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19860634
