Ion-beam deposition of NbNxCythin films for microelectronic applications

Author

Lin, L.-J. ; Prober, D.E.

Author_Institution

Bell Communication Research Laboratory, Red Bank, NJ

Volume

23

Issue

2

fYear

1987

fDate

3/1/1987 12:00:00 AM

Firstpage

839

Lastpage

842

Abstract

We have fabricated high quality superconducting NbNxCythin films using a low-energy dual ion-beam fabrication method. In this method, one ion beam sputters Nb to the substrate while the second beam bombards the growing film with low energy (∼100 eV) N2+CH4ions. The use of methane as a source of carbon is essential for this method. NbNxCythin films fabricated in this way have Tcup to 13.2K, resistivity $\\sim80-120 \\mu\\Omega$ cm, residual resistance ratio ∼1.0 and calculated magnetic penetration depths <285 nm. These films are deposited on Si wafers which are not intentionally heated or cooled. Electronic tunneling studies indicate that these films are strong coupled superconductors ( $2\\Delta /kT_{c} \\leq 4.0$ ) with superconducting energy gaps up to 2.43 meV. NbNxCy/native oxide/Pb-alloy Junctions have properties suitable for SIS mixer applications.

Keywords

Ion implantation; Superconducting films; Conductivity; Fabrication; Ion beams; Magnetic films; Niobium; Sputtering; Substrates; Superconducting devices; Superconducting films; Superconducting thin films;

fLanguage

English

Journal_Title

Magnetics, IEEE Transactions on

Publisher

ieee

ISSN

0018-9464

Type

jour

DOI

10.1109/TMAG.1987.1065146

Filename

1065146