• DocumentCode
    1025667
  • Title

    Planar buried heterostructure InP/GaInAs lasers grown entirely by OMVPE

  • Author

    Miller, B.I. ; Koren, U. ; Capik, R.J.

  • Author_Institution
    AT&T Bell Laboratories, Holmdel, USA
  • Volume
    22
  • Issue
    18
  • fYear
    1986
  • Firstpage
    947
  • Lastpage
    949
  • Abstract
    GaInAs/InP planar buried heterostructure (PBH) lasers with semi-insulating blocking layers were grown in an `all¿ atmospheric OMVPE system. These layers had current thresholds as low as 35 mA and differential quantum efficiencies of ¿16% at a wavelength of 1.64 ¿m. The maximum power output was 80 mW pulsed and 8mWCW.
  • Keywords
    III-V semiconductors; gallium arsenide; indium compounds; semiconductor growth; semiconductor junction lasers; vapour phase epitaxial growth; CW power; OMVPE; current thresholds; differential quantum efficiencies; maximum power output; planar BH laser; pulsed power; semiconductor laser; semiinsulating blocking layers; wavelength;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19860646
  • Filename
    4256853
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1025667