• DocumentCode
    1025691
  • Title

    New double heterostructure optoelectronic triangular barrier switch (OETBS)

  • Author

    Mand, R.S. ; Ashizawa, Y. ; Nakamura, M.

  • Author_Institution
    Toshiba Corporation, Research & Development Center, Kawasaki, Japan
  • Volume
    22
  • Issue
    18
  • fYear
    1986
  • Firstpage
    952
  • Lastpage
    953
  • Abstract
    A new high-speed, high-power optoelectronic device, with a double heterostructure, is proposed and demonstrated. The device has bistable electrical characteristics where light emission occurs in the on-state. The high optical power output was measured to be 209¿W at 100 mA. The transient electrical and optical rise times have been measured to be 500 ps and 1 ns, respectively.
  • Keywords
    III-V semiconductors; aluminium compounds; gallium arsenide; integrated optoelectronics; semiconductor switches; bistable electrical characteristics; double-heterostructure optoelectronic triangular barrier switch; light emission; optical power output; transient rise times;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19860649
  • Filename
    4256856
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1025691