• DocumentCode
    1025703
  • Title

    Critical excitation function of distributed-parameter devices

  • Author

    Happ, W.W. ; Staudhammer, J.

  • Author_Institution
    NASA Electronics Research Center, Cambridge, Mass.
  • Issue
    3
  • fYear
    1966
  • fDate
    3/1/1966 12:00:00 AM
  • Firstpage
    347
  • Lastpage
    361
  • Abstract
    A technique is described to estimate the transient response of thin-film devices at time intervals which exceed the greatest time constant or which are exceeded by the smallest time constant of the device. Relevant properties of distributed-parameter network functions are evaluated by applying the extreme value limit theorem to the corresponding Laplace Transform. Each configuration is characterized by an associated excitation function which predicts the device response at extreme values in the time domain ( t = 0 and t = \\infty ). A systematic investigation of the transient response of a rectangular \\bar{RC} film-type network consists of tabulating characteristics or critical excitation functions for all eight driving-point configurations and for all twelve transfer-function configurations due to excitation of the type s_{-n/2} with n = 0, 1, 2, 3, 4 . Once the critical excitation function is determined, the transient response for arbitrary excitations is readily available. Applications to design problems encountered in thin-film and integrated circuits are discussed. The technique becomes increasingly accurate as time intervals are approached which correspond to frequencies outside the range of break-frequencies of the device.
  • fLanguage
    English
  • Journal_Title
    Electron Devices, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9383
  • Type

    jour

  • DOI
    10.1109/T-ED.1966.15691
  • Filename
    1474281