DocumentCode
1025703
Title
Critical excitation function of distributed-parameter devices
Author
Happ, W.W. ; Staudhammer, J.
Author_Institution
NASA Electronics Research Center, Cambridge, Mass.
Issue
3
fYear
1966
fDate
3/1/1966 12:00:00 AM
Firstpage
347
Lastpage
361
Abstract
A technique is described to estimate the transient response of thin-film devices at time intervals which exceed the greatest time constant or which are exceeded by the smallest time constant of the device. Relevant properties of distributed-parameter network functions are evaluated by applying the extreme value limit theorem to the corresponding Laplace Transform. Each configuration is characterized by an associated excitation function which predicts the device response at extreme values in the time domain (
and
). A systematic investigation of the transient response of a rectangular
film-type network consists of tabulating characteristics or critical excitation functions for all eight driving-point configurations and for all twelve transfer-function configurations due to excitation of the type
with
. Once the critical excitation function is determined, the transient response for arbitrary excitations is readily available. Applications to design problems encountered in thin-film and integrated circuits are discussed. The technique becomes increasingly accurate as time intervals are approached which correspond to frequencies outside the range of break-frequencies of the device.
and
). A systematic investigation of the transient response of a rectangular
film-type network consists of tabulating characteristics or critical excitation functions for all eight driving-point configurations and for all twelve transfer-function configurations due to excitation of the type
with
. Once the critical excitation function is determined, the transient response for arbitrary excitations is readily available. Applications to design problems encountered in thin-film and integrated circuits are discussed. The technique becomes increasingly accurate as time intervals are approached which correspond to frequencies outside the range of break-frequencies of the device.fLanguage
English
Journal_Title
Electron Devices, IEEE Transactions on
Publisher
ieee
ISSN
0018-9383
Type
jour
DOI
10.1109/T-ED.1966.15691
Filename
1474281
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