• DocumentCode
    1025887
  • Title

    Frequency shift of a GaAlAs diode laser in a magnetic field

  • Author

    Sato, Takao ; Yashima, S. ; Shimba, M.

  • Author_Institution
    Niigata University, Faculty of Engineering, Niigata, Japan
  • Volume
    22
  • Issue
    19
  • fYear
    1986
  • Firstpage
    979
  • Lastpage
    981
  • Abstract
    The oscillation frequency shift of a GaAlAs diode laser under a magnetic field at room temperature is reported. In this experiment the observed frequency shift is 500 MHz to the low-frequency side at the magnetic flux density of 1.4 T, and shows the quadratic dependence on the magnetic flux density.
  • Keywords
    III-V semiconductors; aluminium compounds; gallium arsenide; magneto-optical effects; semiconductor junction lasers; GaAlAs diode laser; magnetic field; magnetic flux density; oscillation frequency shift; semiconductors;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19860670
  • Filename
    4256879