DocumentCode
1025887
Title
Frequency shift of a GaAlAs diode laser in a magnetic field
Author
Sato, Takao ; Yashima, S. ; Shimba, M.
Author_Institution
Niigata University, Faculty of Engineering, Niigata, Japan
Volume
22
Issue
19
fYear
1986
Firstpage
979
Lastpage
981
Abstract
The oscillation frequency shift of a GaAlAs diode laser under a magnetic field at room temperature is reported. In this experiment the observed frequency shift is 500 MHz to the low-frequency side at the magnetic flux density of 1.4 T, and shows the quadratic dependence on the magnetic flux density.
Keywords
III-V semiconductors; aluminium compounds; gallium arsenide; magneto-optical effects; semiconductor junction lasers; GaAlAs diode laser; magnetic field; magnetic flux density; oscillation frequency shift; semiconductors;
fLanguage
English
Journal_Title
Electronics Letters
Publisher
iet
ISSN
0013-5194
Type
jour
DOI
10.1049/el:19860670
Filename
4256879
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