Title :
LPVPE-grown silicon camel diodes
Author :
Vescan, L. ; Beneking, H.
Author_Institution :
Aachen Technical University, Institute of Semiconductor Electronics, Aachen, West Germany
Abstract :
Low-pressure vapour-phase epitaxy (LPVPE) was applied to fabricate multilayer structures like camel diodes. Using in situ doping and selective growth, camel diodes with good ideality factors (1.08¿1.2) and low generation-recombination currents were realised.
Keywords :
elemental semiconductors; semiconductor diodes; silicon; vapour phase epitaxial growth; LPVPE-grown silicon camel diodes; Si; camel diodes; generation-recombination currents; ideality factors; in situ doping; low-pressure vapour phase epitaxy; multilayer structures; selective growth;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19860680
