Title :
Influence of drain-induced barrier lowering on the dynamic conductance of short-channel MOSFETs
Author :
Ghibaudo, G. ; Cabon, B.
Author_Institution :
ENSERG, Laboratoire de Physique des Composants Ã\xa0 Semiconducteurs, UA-CNRS 840, Grenoble, France
Abstract :
An analysis of the influence of drain-induced barrier lowering (DIBL) on the dynamic conductance of short-channel MOSFETs is presented. A new method of determination of surface state density Nss from the normalised dynamic conductance characteristics is proposed. The method is extended to the case of very short-channel devices to account for DIBL effects.
Keywords :
insulated gate field effect transistors; surface electron states; drain-induced barrier lowering; dynamic conductance; short-channel MOSFETs; surface state density;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19860690
