Title :
Lead chalcogenide VECSEL on Si emitting at 5 μm
Author :
Rahim, Mohamed ; Felder, F. ; Fill, M. ; Boye, D. ; Zogg, H.
Author_Institution :
Thin Film Phys. Group, ETH Zurich, Zurich
Abstract :
A mid-infrared vertical external cavity surface emitting laser (VECSEL) on a Si substrate has been realised. It is optically pumped and emits around 5 mum wavelength. Maximum output power of 26 mWp (limited by the 1.5 m wavelength pump laser) was observed at 100 K operating temperature with 3 s pulse widths. The active part is just a 1.3 m-thick PbTe layer.
Keywords :
II-VI semiconductors; lead compounds; optical pumping; silicon; surface emitting lasers; PbTe; Si; mid-infrared vertical external cavity surface emitting laser; optical pumping; size 1.3 mum; temperature 100 K; wavelength 5 mum;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:20082500
