DocumentCode :
1026150
Title :
Silicon nitride, a new diffusion mask
Author :
Doo, V.Y.
Author_Institution :
IBM Systems Development Division, East Fishkill Facility, Hopewell Junction, N. Y.
Issue :
7
fYear :
1966
fDate :
7/1/1966 12:00:00 AM
Firstpage :
561
Lastpage :
563
Abstract :
Although in the last decade silicon dioxide has been used extensively as a diffusion mask in semiconductor device fabrication, it has many limitations. It fails to mask many important diffusants such as gallium, aluminum, zinc, and oxygen. The masking properties of silicon nitride have been investigated. The results show that silicon nitride masks not only the same diffusants as silicon dioxide but also many diffusants where silicon dioxide fails.
fLanguage :
English
Journal_Title :
Electron Devices, IEEE Transactions on
Publisher :
ieee
ISSN :
0018-9383
Type :
jour
DOI :
10.1109/T-ED.1966.15735
Filename :
1474325
Link To Document :
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