مرکز منطقه ای اطلاع رساني علوم و فناوري - MOS capacitance evaluation of gold diffusion in silicon and thermally grown silicon dioxide

DocumentCode :

1026488

Title :

MOS capacitance evaluation of gold diffusion in silicon and thermally grown silicon dioxide

Author :

Collins, D.R. ; Schroder, Dieter K. ; Sah, C.T.

Author_Institution :

University of Illinois

Issue :

42591

fYear :

1966

Firstpage :

673

Lastpage :

673

fLanguage :

English

Journal_Title :

Electron Devices, IEEE Transactions on

Publisher :

ieee

ISSN :

0018-9383

Type :

jour

DOI :

10.1109/T-ED.1966.15770

Filename :

1474360

Link To Document :