DocumentCode :
1026496
Title :
Influence of surface conditions on silicon transistor current gain (h
FE
)
Author :
Reddi, V.G.K.
Author_Institution :
Fairchild Semiconductor
Issue :
42591
fYear :
1966
Firstpage :
673
Lastpage :
673
fLanguage :
English
Journal_Title :
Electron Devices, IEEE Transactions on
Publisher :
ieee
ISSN :
0018-9383
Type :
jour
DOI :
10.1109/T-ED.1966.15771
Filename :
1474361
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=1026496
