Title :
Direct electro-optic sampling of a GaAs integrated circuit using a gain-switched InGaAsP injection laser
Author :
Taylor, A.J. ; Tucker, R.S. ; Wiesenfeld, J.M. ; Burrus, C.A. ; Eisenstein, G. ; Talman, J.R. ; Pei, S.S.
Author_Institution :
AT&T Bell Laboratories, Crawford Hill Laboratory, Holmdel, USA
Abstract :
We demonstrate an electro-optic sampling system based on a gain-switched InGaAsP injection laser. The system has a temporal resolution of 18ps and is used for noninvasive probing of waveform internal to a GaAs monolithic integrated circuit operating at 2.4GHz.
Keywords :
III-V semiconductors; electro-optical devices; gallium arsenide; gallium compounds; indium compounds; integrated circuit testing; integrated optoelectronics; laser beam applications; monolithic integrated circuits; semiconductor junction lasers; 18 ps; 2.4 GHz; GaAs; GaAs monolithic integrated circuit; InGaAsP; electrooptic sampling; gain-switched InGaAsP injection laser; noninvasive probing; semiconductor laser; temporal resolution;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19860732
