Title :
1.5- mu m InGaAs/InAlGaAs quantum-well microdisk lasers
Author :
Chu, D.Y. ; Chin, M.K. ; Sauer, N.J. ; Xu, Z. ; Chang, T.Y. ; Ho, S.T.
Author_Institution :
Dept. of Electr. Eng. & Comput. Sci., Northwestern Univ., Evanston, IL, USA
Abstract :
Microdisk lasers with three InGaAs/InAlGaAs quantum wells were demonstrated for the first time. The selective etching method used to fabricate the laser structure is discussed. Lasers 20 mu m in diameter lased with single mode at 1.5- mu m wavelength when optically pumped by a pulsed argon-ion laser at 80 K.<>
Keywords :
III-V semiconductors; aluminium compounds; etching; gallium arsenide; indium compounds; optical pumping; semiconductor lasers; semiconductor technology; 1.5 micron; 20 micron; 80 K; Ar; InGaAs-InAlGaAs; InGaAs/InAlGaAs quantum-well microdisk lasers; fabrication; optical pumping; pulsed argon-ion laser; selective etching; single mode; Distributed feedback devices; Etching; Indium gallium arsenide; Laser feedback; Laser modes; Pump lasers; Quantum well lasers; Ring lasers; Semiconductor lasers; Waveguide lasers;
Journal_Title :
Photonics Technology Letters, IEEE
