Title :
Large optical cavity (LOC) semiconductor laser arrays
Author :
Jansen, M. ; Ou, S.S. ; Yang, J.J. ; Wilcox, J. ; Sergant, M. ; Eaton, L. ; Simmons, W.
Author_Institution :
TRW Space & Technology Group, Redondo Beach, USA
Abstract :
Schottky barrier and oxide-restricted ridge-waveguide large optical cavity (LOC) arrays were fabricated and tested. Both evanescently coupled and diffraction-coupled array geometries were evaluated in terms of lateral and transverse mode behaviour. The array stripes were 3 ¿m wide, with a separation of 4.5, 6, 7.5 and 9 ¿m from centre to centre. Peak powers of over 2W were obtained for 11-element devices, with typical threshold currents in the range of 20¿25 mA/ stripe and differential quantum efficiencies of more than 60%. Single-lobe lateral far-field patterns were obtained for evanescently coupled arrays with a centre-to-centre stripe spacing of 4.5 ¿m and for diffraction-coupled arrays with a centre-to-centre stripe spacing of 6 ¿m and with 30 ¿m-long diffraction regions. The transverse-mode behaviour was investigated as a function of the guiding layer width.
Keywords :
III-V semiconductors; aluminium compounds; gallium arsenide; laser cavity resonators; optical waveguides; semiconductor junction lasers; 2 W; 20 to 25 mA; 3 micron; 60 percent; GaAs-AlGaAs; Schottky barrier ridge waveguide arrays; centre-to-centre stripe spacing; differential quantum efficiencies; diffraction-coupled array geometries; evanescently coupled array geometries; guiding layer width; large optical cavity; lateral far-field patterns; oxide restricted ridge waveguide arrays; power 2 W; semiconductor laser arrays; threshold currents; transverse-mode behaviour; width 3 microns;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19860742
