DocumentCode
1026660
Title
Realization of tensile strain on GaAs substrates for polarization independent optical modulation
Author
Chan, Yuen-Chuen ; Tada, Kunio
Author_Institution
Dept. of Electron. Eng., Tokyo Univ., Japan
Volume
5
Issue
12
fYear
1993
Firstpage
1380
Lastpage
1383
Abstract
The quantum-confined Stark effect of tensile-strained GaAs-InAlAs quantum wells grown on top of a related nonpseudomorphic InAlAs grid layer on GaAs substrates was studied. It was demonstrated by waveguide absorption measurements that polarization-independent optical modulation in tensile-strained GaAs wells is possible in a wavelength range of around 870 nm.<>
Keywords
III-V semiconductors; Stark effect; aluminium compounds; gallium arsenide; indium compounds; light polarisation; optical modulation; semiconductor quantum wells; 870 nm; GaAs; GaAs substrates; GaAs-InAlAs; GaAs-lnAlAs quantum wells; nonpseudomorphic InAlAs grid layer; polarization independent optical modulation; quantum-confined Stark effect; tensile strain; waveguide absorption; Absorption; Energy states; Gallium arsenide; Optical modulation; Optical polarization; Optical refraction; Optical variables control; Optical waveguides; Potential well; Tensile strain;
fLanguage
English
Journal_Title
Photonics Technology Letters, IEEE
Publisher
ieee
ISSN
1041-1135
Type
jour
DOI
10.1109/68.262547
Filename
262547
Link To Document