Title :
Quantum-confined Stark effect modulators at 1.06 mu m on GaAs
Author :
Fan, C. ; Shih, D.W. ; Hansen, M.W. ; Esener, S.C. ; Wieder, H.H.
Author_Institution :
Dept. of Electr. & Comput. Eng., California Univ., San Diego, La Jolla, CA, USA
Abstract :
Electroabsorption modulation is achieved at or near a wavelength of 1.06 mu m with In/sub x/Al/sub y/Ga/sub 1-x-y/As/In/sub x/Ga/sub 1-x/As multiple-quantum-well (MQW) structures grown on GaAs substrates. The lattice mismatch (close to 2%) between the MQW and the substrate is accommodated by a compositional-step-graded buffer array. A dislocation density of less than 10/sup 7//cm/sup 2/ is estimated for the MQW region. For 80-to-100 AA well widths, a maximum electroabsorption coefficient of 8000 cm/sup -1/ with an applied voltage of 15 V is obtained.<>
Keywords :
III-V semiconductors; Stark effect; aluminium compounds; dislocation density; electro-optical devices; electroabsorption; gallium arsenide; indium compounds; optical modulation; semiconductor quantum wells; 1.06 micron; 15 V; GaAs; GaAs substrates; In/sub x/Al/sub y/Ga/sub 1-x-y/As/In/sub x/Ga/sub 1-x/As; InAlGaAs-InGaAs; compositional-step-graded buffer array; dislocation density; electroabsorption modulation; lattice mismatch; multiple-quantum-well structures; quantum-confined Stark effect modulators; Capacitive sensors; Gallium arsenide; Indium gallium arsenide; Lattices; Molecular beam epitaxial growth; Optical fiber communication; Optical interconnections; Quantum well devices; Stark effect; Substrates;
Journal_Title :
Photonics Technology Letters, IEEE
