• DocumentCode
    1026668
  • Title

    InGaAs/InAlAs heterojunction Schottky transistors grown by MBE

  • Author

    Vlcek, J.C. ; Fonstad, C.G.

  • Author_Institution
    Massachusetts Institute of Technology, Department of Electrical Engineering & Computer Science and Center for Materials Science & Engineering, Cambridge, USA
  • Volume
    22
  • Issue
    20
  • fYear
    1986
  • Firstpage
    1088
  • Lastpage
    1089
  • Abstract
    Heterojunction bipolar transistors incorporating a Schottky collector have been fabricated in In0.53Ga0.47As/In0.52Al0.48As grown by molecular beam epitaxy. Devices show very high emitter-base junction saturation current densities, low offset voltages and current gain greater than unity (¿2.5) in spite of the fact that no attempt was made to isolate the extrinsic base-emitter junction.
  • Keywords
    III-V semiconductors; Schottky effect; aluminium compounds; bipolar transistors; gallium arsenide; indium compounds; molecular beam epitaxial growth; semiconductor growth; HJBT; InGaAs-InAlAs; InGaAs/InAlAs heterojunction Schottky transistors; Schottky collector; bipolar transistors; current gain; emitter-base junction saturation current densities; extrinsic base-emitter junction; molecular beam epitaxy; offset voltages;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19860746
  • Filename
    4256959
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1026668