• DocumentCode
    1026706
  • Title

    Independence of absorption coefficient-linewidth product to material system for multiple quantum wells with excitons from 850 nm to 1064 nm

  • Author

    Goossen, Keith W. ; Santos, M.B. ; Cunningham, J.E. ; Jan, W.Y.

  • Author_Institution
    AT&T Bell Labs., Holmdel, NJ, USA
  • Volume
    5
  • Issue
    12
  • fYear
    1993
  • Firstpage
    1392
  • Lastpage
    1394
  • Abstract
    The authors have measured the absorption coefficient ( alpha ) and linewidth ( Delta ) of the excitons of GaAs/AlGaAs and strain-balanced InGaAs/GaAsP multiple-quantum-well (MQW) modulators with wavelengths from 850 to 1064 nm. They find that alpha decreases and Delta increases as wavelength increases, but their product, and thus the integrated absorption coefficient, remains roughly constant. Thus, the reduced performance observed for longer wavelength modulators is due to exciton broadening.<>
  • Keywords
    III-V semiconductors; aluminium compounds; electro-optical devices; excitons; gallium arsenide; optical modulation; semiconductor quantum wells; spectral line breadth; 850 to 1064 nm; GaAs-AlGaAs; GaAs/AlGaAs; InGaAs/GaAsP; absorption coefficient-linewidth product; electro optical devices; exciton broadening; excitons; integrated absorption coefficient; material system; multiple quantum wells; strain-balanced; Absorption; Capacitive sensors; Excitons; Gallium arsenide; Indium gallium arsenide; Optical modulation; Optical surface waves; Quantum well devices; Rough surfaces; Surface roughness;
  • fLanguage
    English
  • Journal_Title
    Photonics Technology Letters, IEEE
  • Publisher
    ieee
  • ISSN
    1041-1135
  • Type

    jour

  • DOI
    10.1109/68.262551
  • Filename
    262551