Controlled nonlinearity monolithic integrated optoelectronic mixing receiver

Author

Liu, Qing Z. ; MacDonald, R. Ian

Author_Institution

Telecommun. Res. Lab., Edmonton, Alta., Canada

Volume

5

Issue

12

fYear

1993

Firstpage

1403

Lastpage

1406

Abstract

A monolithic integrated optoelectronic mixing receiver with low conversion loss is demonstrated. It consists of a GaAs metal-semiconductor-metal (MSM) photodetector mixer and a two-stage transimpedance preamplifier. By modulating the bias of the MSM photodetector with a local oscillator, the information signal on an optical carrier is down-converted to an electrical intermediate frequency. The mixing receiver nonlinearity can be controlled by simply changing the bias values to the MSM photodetector. The optoelectronic mixer has applications in subcarrier-multiplied lightwave distribution systems.<>

Keywords

III-V semiconductors; gallium arsenide; integrated optoelectronics; intermediate-frequency amplifiers; metal-semiconductor-metal structures; mixers (circuits); optical frequency conversion; optical losses; optical receivers; photodetectors; preamplifiers; GaAs; GaAs metal-semiconductor-metal photodetector mixer; bias modulation; conversion loss; down-conversion; electrical intermediate frequency; information signal; local oscillator; monolithic integrated optoelectronic mixing receiver; nonlinearity control; optical carrier; subcarrier-multiplied lightwave distribution systems; two-stage transimpedance preamplifier; Gallium arsenide; Integrated optoelectronics; Local oscillators; Mixers; Optical losses; Optical mixing; Optical modulation; Optical receivers; Photodetectors; Preamplifiers;

fLanguage

English

Journal_Title

Photonics Technology Letters, IEEE

Publisher

ieee

ISSN

1041-1135

Type

jour

DOI

10.1109/68.262555

Filename

262555