Title :
1.5 mu m GaInAsP angled-facet flared-waveguide traveling-wave laser amplifiers
Author :
Zah, C.E. ; Bhat, R. ; Menocal, S.G. ; Andreadakis, N. ; Favire, F. ; Caneau, C. ; Koza, M.A. ; Lee, T.P.
Author_Institution :
Bellcore, Red Bank, NJ, USA
Abstract :
A broadband laser amplifier requires extremely low facet reflectivity (<0.1%). Previously, a low effective facet reflectivity of 0.05% was realized by an angle-facet structure in the 1.3- mu m wavelength band. Present work reports an improved structure for the 1.5- mu m wavelength band by flaring the waveguide ends near the angled facets. With a conventional antireflection coating of approximately 1% reflectivity, the measured effective facet reflectivity is less than 0.01% and the resultant devices have a fiber-to-fiber gain of 15 dB centered at 1.49 mu m.<>
Keywords :
III-V semiconductors; antireflection coatings; gallium arsenide; gallium compounds; indium compounds; laser transitions; optical waveguides; semiconductor junction lasers; 1.5 micron; 15 dB; GaInAsP; GaInAsP angled-facet flared-waveguide traveling-wave laser amplifiers; III-V semiconductor; antireflection coating; broadband laser amplifier; extremely low facet reflectivity; fiber-to-fiber gain; Bit rate; Coatings; Laser modes; Mirrors; Optical amplifiers; Optical fiber amplifiers; Optical fiber devices; Optical waveguides; Reflectivity; Waveguide lasers;
Journal_Title :
Photonics Technology Letters, IEEE
