DocumentCode
1026830
Title
An Al/sub x/Ga/sub 1-x/Sb avalanche photodiode with a gain bandwidth product of 90 GHz
Author
Kuwatsuka, H. ; Mikawa, T. ; Miura, S. ; Yasuoka, N. ; Tanahashi, T. ; Wada, O.
Author_Institution
Fujitsu Labs. Ltd., Atsugi, Japan
Volume
2
Issue
1
fYear
1990
Firstpage
54
Lastpage
55
Abstract
An Al/sub x/Ga/sub 1-x/Sb avalanche photodiode (APD) with an Al composition of 0.05 has been fabricated and tested. The measured gain-bandwidth (GB) product of the highly doped diode is 90 GHz. Such a large GB product has never been previously achieved by any APD materials sensitive in the long-wavelength region. This suggests the advantage of the Al/sub x/Ga/sub 1-x/Sb material system for very high-speed operation.<>
Keywords
III-V semiconductors; aluminium compounds; avalanche photodiodes; gallium compounds; 90 GHz; Al/sub x/Ga/sub 1-x/Sb avalanche photodiode; III-V semiconductor; gain bandwidth product; highly doped diode; long-wavelength region; very high-speed operation; Avalanche photodiodes; Bandwidth; Bit rate; Capacitance; Dark current; Frequency measurement; Gold; Indium phosphide; Ionization; Semiconductor diodes;
fLanguage
English
Journal_Title
Photonics Technology Letters, IEEE
Publisher
ieee
ISSN
1041-1135
Type
jour
DOI
10.1109/68.47041
Filename
47041
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