Title :
Submilliampere lasing of Zn-diffused mesa buried-hetero AlxGa1-xAs/GaAs multi-quantum-well lasers at 77 K
Author :
Kurobe, Atsushi ; Furuyama, H. ; Naritsuka, Shigeya ; Kokubun, Yasuo ; Nakamura, Mitsutoshi
Author_Institution :
Toshiba Corporation, Research & Development Center, Kawasaki, Japan
Abstract :
Extremely low-threshold semiconductor lasers were fabricated by forming Zn-diffused mesa buried-hetero (DMB) structures from low-pressure MOCVD-grown AlxGa1-xAs/GaAs multi-quantum-well, separate-confinement heterostructure wafers. CW threshold currents as low as 880 ¿A at 77 K and 2.4 mA at room temperature were obtained for a 100 ¿m-long device.
Keywords :
III-V semiconductors; aluminium compounds; gallium arsenide; p-n heterojunctions; semiconductor junction lasers; AlxGa1-xAs-GaAs; AlxGa1-xAs/GaAs; CW threshold currents; III-V semiconductors; Zn-diffused mesa buried-hetero; low-pressure MOCVD-grown; low-threshold semiconductor lasers; multi-quantum-well lasers; room temperature; separate-confinement heterostructure wafers; submilliampere lasing;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19860765
