Title :
High-frequency performance of lattice-strained heterojunction GaInAs/GaAs bipolar transistors
Author :
Ramberg, L.P. ; Chen, Yen-Kuang ; Enquist, P.M. ; Najjar, F.E. ; Eastman, L.F. ; Kavanagh, K.L.
Author_Institution :
Cornell University, School of Electrical Engineering, Ithaca, USA
Abstract :
The performance of bipolar devices and circuits in the novel lattice-strained GaInAs/GaAs materials system show an improving trend with increased In composition in the base. An fT of 8 GHz has been measured using an 8 ¿m emitter stripe width and 8% In. A small-signal model is presented.
Keywords :
III-V semiconductors; bipolar transistors; equivalent circuits; gallium arsenide; indium compounds; semiconductor device models; solid-state microwave devices; 8 GHz cutoff frequency; GaInAr-GaAs; GaInAs/GaAs; III-V semiconductors; bipolar transistors; lattice-strained heterojunction; small-signal model; solid-state microwave devices;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19860770
