Title :
Room temperature continuous wave operation of 671 nm wavelength GaInAsP/AlGaAs VSIS lasers
Author :
Chong, Te-Ho ; Kishino, Katsumi
Author_Institution :
Dept. of Electr. & Electron. Eng., Sophia Univ., Tokyo, Japan
Abstract :
Room-temperature continuous-wave (CW) operation of a liquid-phase epitaxy (LPE)-grown GaInAsP/AlGaAs laser that uses a V-channel substrate inner stripe (VSIS) structure to obtain current confinement and transverse mode control is discussed. The threshold current and lasing wavelength were 77 mA and 671 nm, respectively, and the temperature dependence of the threshold current was such that the characteristic temperature was 75 K.<>
Keywords :
III-V semiconductors; aluminium compounds; gallium arsenide; gallium compounds; indium compounds; liquid phase epitaxial growth; semiconductor growth; semiconductor junction lasers; 293 K; 671 nm; 75 K; 77 mA; V-channel substrate inner stripe structure; characteristic temperature; current confinement; lasing wavelength; liquid phase epitaxy grown GaInAsP-AlGaAs laser; room temperature continuous wave operation; temperature dependence; threshold current; transverse mode control; Fiber lasers; Gallium arsenide; Laser modes; MOCVD; Optical control; Optical device fabrication; Semiconductor lasers; Substrates; Temperature dependence; Threshold current;
Journal_Title :
Photonics Technology Letters, IEEE
