Title :
Efficient linewidth reduction in conventional 1.5 mu m laser diodes by integration to a weakly coupled InGaAsP Bragg waveguide with low optical losses
Author :
DeCooman, B.C. ; van der Hofstad, G.L.A. ; Kuindersma, P.I. ; Scheepers, W. ; Cnoops, J.M.H. ; Baele, I.A.F.
Author_Institution :
Philips Res. Lab., Eindhoven, Netherlands
Abstract :
Detuned single-mode lasers with excellent linewidth performance (minimum linewidth of 2 MHz) have been obtained by monolithically coupling a low loss, low kappa tunable InGaAsP Bragg waveguide (BW) to double-channel planar buried heterostructure 1.5- mu m GaInAsP laser diodes using conventional liquid-phase epitaxy (LPE) fabrication techniques. The results compare favorably to the results obtained by coupling a Fabry-Perot laser to a SiO/sub 2/-Si/sub 3/N/sub 4/-SiO/sub 2/ BW. The main advantages of the present method over the hybrid approach are the mechanical stability and the excellent coupling between the sections of the integrated device. Further reduction of the kappa of the InGaAsP BW should result in even lower linewidths.<>
Keywords :
III-V semiconductors; gallium arsenide; indium compounds; integrated optics; liquid phase epitaxial growth; optical losses; optical waveguides; semiconductor growth; semiconductor junction lasers; spectral line breadth; 1.5 micron; InGaAsP; double channel planar buried heterostructure GaInAsP laser diodes; integrated device; integration; linewidth reduction; liquid phase epitaxy fabrication techniques; mechanical stability; monolithically coupling; optical losses; tunable InGaAsP Bragg waveguide; weakly coupled Bragg waveguide; Diode lasers; Epitaxial growth; Laser stability; Liquid waveguides; Optical coupling; Optical device fabrication; Performance loss; Planar waveguides; Tunable circuits and devices; Waveguide lasers;
Journal_Title :
Photonics Technology Letters, IEEE
