A thermal model for insulated gate bipolar transistor module

Author

Luo, Zhaohui ; Ahn, Hyungkeun ; Nokali, M.A.E.

Author_Institution

Dept. of Electr. Eng., Univ. of Pittsburgh, PA, USA

Volume

19

Issue

4

fYear

2004

fDate

7/1/2004 12:00:00 AM

Firstpage

902

Lastpage

907

Abstract

A thermal resistor-capacitor (RC) model is introduced for the power insulated gate bipolar transistor (IGBT) modules used in a three-phase inverter. The parameters of the model are extracted from the experimental data for the transient thermal impedance from-junction-to-case Z_jc and case-to-ambient Z_ca. The accuracy of the RC model is verified by comparing its predictions with those resulting from the three-dimensional finite element method simulation. The parameter extraction algorithm is easy to adapt to other types of power modules in an industrial application environment.

Keywords

RC circuits; finite element analysis; insulated gate bipolar transistors; invertors; power bipolar transistors; thermal conductivity; IGBT thermal model; RC model; case-to-ambient impedance; industrial applications; parameter extraction algorithms; power insulated gate bipolar transistor modules; thermal resistor-capacitor model; three-dimensional finite element method; three-phase inverters; transient thermal impedance; Analytical models; Data mining; Finite element methods; Impedance; Insulated gate bipolar transistors; Inverters; Predictive models; Switching frequency; Temperature; Thermal resistance; $RC$; FEM; Finite element method; IGBT; insulated gate bipolar transistor; network; thermal resistor–capacitor; transient thermal impedance;

fLanguage

English

Journal_Title

Power Electronics, IEEE Transactions on

Publisher

ieee

ISSN

0885-8993

Type

jour

DOI

10.1109/TPEL.2004.830089

Filename

1310376