Title :
A thermal model for insulated gate bipolar transistor module
Author :
Luo, Zhaohui ; Ahn, Hyungkeun ; Nokali, M.A.E.
Author_Institution :
Dept. of Electr. Eng., Univ. of Pittsburgh, PA, USA
fDate :
7/1/2004 12:00:00 AM
Abstract :
A thermal resistor-capacitor (RC) model is introduced for the power insulated gate bipolar transistor (IGBT) modules used in a three-phase inverter. The parameters of the model are extracted from the experimental data for the transient thermal impedance from-junction-to-case Zjc and case-to-ambient Zca. The accuracy of the RC model is verified by comparing its predictions with those resulting from the three-dimensional finite element method simulation. The parameter extraction algorithm is easy to adapt to other types of power modules in an industrial application environment.
Keywords :
RC circuits; finite element analysis; insulated gate bipolar transistors; invertors; power bipolar transistors; thermal conductivity; IGBT thermal model; RC model; case-to-ambient impedance; industrial applications; parameter extraction algorithms; power insulated gate bipolar transistor modules; thermal resistor-capacitor model; three-dimensional finite element method; three-phase inverters; transient thermal impedance; Analytical models; Data mining; Finite element methods; Impedance; Insulated gate bipolar transistors; Inverters; Predictive models; Switching frequency; Temperature; Thermal resistance; $RC$; FEM; Finite element method; IGBT; insulated gate bipolar transistor; network; thermal resistor–capacitor; transient thermal impedance;
Journal_Title :
Power Electronics, IEEE Transactions on
DOI :
10.1109/TPEL.2004.830089
