Title :
MOCVD growth of selectively doped AlInAs/GaInAs heterostructures and its application to HIFETs (heterointerface FETs)
Author :
Kamada, M. ; Ishikawa, H. ; Ikeda, M. ; Mori, Y. ; Kojima, C.
Author_Institution :
Sony Corporation, Research Center, Yokohama, Japan
Abstract :
For the first time selectivly doped AlInAs/GaInAs heterostructures lattice-matched to InP were successfully grown by MOCVD. Mobility as high as 10500 cm2/Vs (ns=2.7×1012cm-2) was obtained at room temperature. We fabricated a HIFET (heterointerface FET) 1.5 ¿m in gate length using the heterostructure, and it showed a transconductance of 302 mS/mm.
Keywords :
III-V semiconductors; aluminium compounds; gallium arsenide; high electron mobility transistors; indium compounds; p-n heterojunctions; semiconductor doping; semiconductor epitaxial layers; semiconductor growth; vapour phase epitaxial growth; 1.5 ¿m gate length; 302 mS/mm transconductance; AlInAs-GaInAs; AlInAs/GaInAs; HEMT; HIFET; III-V semiconductors; MOCVD growth; MODFET; VPE; heterointerface FETs; high electron mobility transistors; selectively doped heterostructures;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19860786
