• DocumentCode
    1027112
  • Title

    MOCVD growth of selectively doped AlInAs/GaInAs heterostructures and its application to HIFETs (heterointerface FETs)

  • Author

    Kamada, M. ; Ishikawa, H. ; Ikeda, M. ; Mori, Y. ; Kojima, C.

  • Author_Institution
    Sony Corporation, Research Center, Yokohama, Japan
  • Volume
    22
  • Issue
    21
  • fYear
    1986
  • Firstpage
    1147
  • Lastpage
    1148
  • Abstract
    For the first time selectivly doped AlInAs/GaInAs heterostructures lattice-matched to InP were successfully grown by MOCVD. Mobility as high as 10500 cm2/Vs (ns=2.7×1012cm-2) was obtained at room temperature. We fabricated a HIFET (heterointerface FET) 1.5 ¿m in gate length using the heterostructure, and it showed a transconductance of 302 mS/mm.
  • Keywords
    III-V semiconductors; aluminium compounds; gallium arsenide; high electron mobility transistors; indium compounds; p-n heterojunctions; semiconductor doping; semiconductor epitaxial layers; semiconductor growth; vapour phase epitaxial growth; 1.5 ¿m gate length; 302 mS/mm transconductance; AlInAs-GaInAs; AlInAs/GaInAs; HEMT; HIFET; III-V semiconductors; MOCVD growth; MODFET; VPE; heterointerface FETs; high electron mobility transistors; selectively doped heterostructures;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19860786
  • Filename
    4257001
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1027112