Title :
Extremely low-voltage Fabry-Perot reflection modulators
Author :
Yan, R.H. ; Simes, R.J. ; Coldren, L.A.
Author_Institution :
Dept. of Electr. & Comput. Eng., California Univ., Santa Barbara, CA, USA
Abstract :
A normally-on-electroabsorptive surface-normal Fabry-Perot reflection modulator with a reflection change of 47% for an operating voltage swing of only 2 V, i.e. 23%/V, is discussed. The structure has an active region of twenty-four 100-AA-GaAs/100-AA-Al/sub 0.2/Ga/sub 0.8/As multiple quantum wells, sandwiched between two quarter-wavelength grating mirrors with the bottom one more reflective. The wavelength range over which more than half of the maximum reflection change is observed is as wide as approximately 7 nm for 2 V.<>
Keywords :
III-V semiconductors; aluminium compounds; electro-optical devices; gallium arsenide; integrated optics; light reflection; optical modulation; 2 V; GaAs-Al/sub 0.2/Ga/sub 0.8/As multiple quantum wells; III-V semiconductors; active region; electrooptical modulators; normally-on-electroabsorptive surface-normal Fabry-Perot reflection modulator; operating voltage swing; reflection change; structure; two quarter-wavelength grating mirrors; wavelength range; Fabry-Perot; Gallium arsenide; Gratings; Mirrors; Optical reflection; Optical surface waves; Optical waveguides; Reflectivity; Substrates; Voltage;
Journal_Title :
Photonics Technology Letters, IEEE
