Title :
New heterostructure junction field-effect transistor (HJFET)
Author :
Simmons, Jay G. ; Taylor, Graham W.
Author_Institution :
University of Bradford, Microelectronics & CADMAT Centre, Bradford, UK
Abstract :
A new type of heterostructure junction field-effect transistor is proposed which is suitable for realisation in a heterojunction material combination such as AlGaAs-GaAs. The conducting region is a layer which is pinched off by the modulation of a unique n-n heterojunction, formed by either MOCVD or molecular-beam-epitaxial growth techniques. Threshold control is by ion implantation as in MOSFET technology.
Keywords :
III-V semiconductors; aluminium compounds; chemical vapour deposition; gallium arsenide; ion implantation; junction gate field effect transistors; molecular beam epitaxial growth; AlGaAs-GaAs; HJFET; MBE; MOCVD; MOSFET technology; heterojunction material combination; heterostructure junction field-effect transistor; ion implantation; molecular-beam-epitaxial growth techniques; n- n heterojunction; semiconductors; threshold control;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19860799
